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Research Article


ScienceAsia 6 (1980): 123-129 |doi: 10.2306/scienceasia1513-1874.1980.06.123

 

BAND GAP OF AgGaTe2 SEMICONDUCTOR

 

SOMPHONG CHATRAPHORN

Summary: Chalcopyrite semiconducting compounds of the I-III-VI2 group are of interest in their potential application in electro-optical devices. Some basic physical properties of the compounds are still in controversy. The band gap of AgGaTe2 was reported to be 1.1 and 1.32 eV by Pamplin et al. (Pamplin, B.K., Kiyosawa, T. and Masumoto, K. (1979) Prog. Crystal Growth Charact, 1, 331-387) and by Shewchun et al. (Shewchun, J., Loferski, J.J., Beaulieu, R., Chapman, G.H. and Garside, B.K. (1979) J. Appl. Phys. 50, 6978-6985) respectively. Optical absorption study of polycrystalline sample from present investigation yields a direct band gap of 1.211 e V.

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Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, Thailand

Received 26 August 1980