ScienceAsia 21 (1995): 215-227 |doi: 10.2306/scienceasia1513-1874.1995.21.215

DEFECT REACTIONS OF Si IMPLANTATION IN GaAS

P. KENGKAN^a AND R.A. MORROW^b

ABSTRACT: We present a model of defect reactions that describes the electrical activation of Si implanted in simi - insulating GaAs. The model is fit to existing data that exhibit the dependence of carrier concentration on Si concentration, annealing temperature, and the concentration of the native mid-gap electron trap EL2. The defects present are Si_I, Si_GaV _As+, Si_Ga+, Si_As-' Si_Ga+. Si_As- and EL2. Some defect reaction energies, dependence of optimum annealing temperature on Si dose and a restriction on the possible atomic structure of EL2 are obtained.

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a Physics Departments, Khon Kaen University, Khon Kaen, 40002, Thailand.
b Department of physics and Astronomy, University of Maine, Orono, ME, 04469-5709, USA.

Received February 20, 1995