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ScienceAsia 50 (2024):ID 2024104 1-8 |doi: 10.2306/scienceasia1513-1874.2024.104


Effect of succinic acid on the crystal habit of alpha-hemihydrate gypsum prepared from phosphogypsum: Experimental and molecular dynamics simulation study


Wanqing Zhoua,b, Ruijie Qia, Dongmei Liua,b,*, Taiqi Huangc, Da Lic, Xia Yud

 
ABSTRACT:     To efficiently select a reasonable amount of crystal habit modifier to improve the hydration matrix strength of alpha-hemihydrate gypsum (?-HH), this study used phosphogypsum (PG) as the raw material to prepare ?-HH using a semi-liquid phase method under high temperature and high pressure. The effects and mechanism of succinic acid on the growth and development of ?-HH were investigated by experimental study and molecular dynamics (MD) simulations. The results showed that succinic acid increases the formation time of ?-HH. The corresponding bending/compressive strength was adjusted from 3.3/21.1 MPa to 7.0/50.0 MPa. The X-ray photoelectron spectrometer (XPS) further confirmed this finding. The succinic acid carboxyl group reacted with Ca2+ ions, and the succinic acid was adsorbed on the surface of ?-HH, inhibiting its axial growth, explaining this mechanism. The (002) face had the largest surface energy (55.24 J/m2 ) and roughness, fastest growth rate, and the available adsorption sites. The binding energy of succinic acid to the (002) face was the largest at 0.15% concentration. The following sequence was obtained: Eb (0.15%)>Eb (0.3%)>Eb (0.10%)>Eb (0.06%). Succinic acid significantly inhibited the axial growth of ?-HH, which can reasonably explain the experimental results. This guided the preparation of ?-HH selective crystallizer with PG.

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a College of Civil Engineering & Architecture, China Three Gorges University, Hubei 443002 China
b Hubei Key Laboratory of Disaster Prevention and Mitigation, Hubei 443002 China
c China Construction Third Engineering Bureau (Shenzhen) Co., Ltd., Guangdong 518000 China
d School of Architecture and Engineering, Guangxi Electromechanical Vocational and Technical College, Guangxi 530000 China

* Corresponding author, E-mail: 58983701@qq.com

Received 3 Feb 2024, Accepted 15 Sep 2024